Properties of diamond structure SnGe films grown by molecular beam epitaxy
Authors:
- Alex HarwitAHAlex Harwit
- P.R. PukiteP.R. Pukite
- J. AngilelloJAJ. Angilello
- S.S. IyerSIS.S. Iyer
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 395-401
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Molecular beam epitaxy of metastable, diamond structure SnxGe1−x alloysApplied Physics Letters, 1989
- Electronic properties of metastablealloysPhysical Review B, 1987
- Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substratesJournal of Crystal Growth, 1987
- Synthesis of metastable, semiconducting Ge-Sn alloys by pulsed UV laser crystallizationApplied Physics Letters, 1983
- The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxyJournal of Crystal Growth, 1981
- Two-band galvanomagnétic effects in gray tinJournal of Physics and Chemistry of Solids, 1971
- Band Structure of Gray TinPhysical Review Letters, 1963