Theory of the electron-hole plasma in highly excited Si and Ge
Authors:
- 15 August 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 16 (4) , 1552-1563
Abstract
In a microscopic-model calculation the electron-hole system is treated as an interacting free-carrier system in thermal equilibrium with a nonideal exciton gas. Renormalization of the excitons is approximately taken into account. The chemical potential as a function of the total electron-hole density is discussed with respect to possible unstable regions also in the low-density regime. Making simplifying assumptions, the phase diagram for the metallic condensation is derived for Ge and Si and compared to experimental data.Keywords
This publication has 32 references indexed in Scilit:
- Temperature dependence of the electron-hole-liquid luminescence in SiPhysical Review B, 1976
- Electron-hole drops in siliconSolid State Communications, 1975
- Electron-hole liquid in many-band systems. I. Ge and Si under large uniaxial strainPhysical Review B, 1974
- Thermodynamics of the Electron-Hole Liquid in Ge, Si, and GaAsPhysical Review Letters, 1974
- Estimation of the Critical Temperature of Electron-Hole Droplets in Ge and SiPhysical Review Letters, 1974
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Electron-Hole Drops in Pure GePhysical Review B, 1973
- Condensation of excitons in germanium and siliconJournal of Physics C: Solid State Physics, 1972
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Condensation of Free Excitons into Electron-Hole Drops in Pure GermaniumPhysical Review B, 1972