Design and fabrication of high performance 4H-SiC TJBS diodes
- 1 March 2020
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 533
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61774117, 61804118, 2015CB759600)
- Fundamental Research Funds for the Central Universities (20101185935, 20106186647)
This publication has 13 references indexed in Scilit:
- Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS RectifierMaterials Science Forum, 2017
- A new SiC diode with significantly reduced threshold voltage2017
- Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings terminationSolid-State Electronics, 2017
- Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's modelJournal of Physics D: Applied Physics, 2014
- 4H-SiC Trench Schottky Diodes for Next Generation ProductsMaterials Science Forum, 2013
- High performance SiC trench devices with ultra-low ron2011
- Design considerations and experimental analysis for silicon carbide power rectifiersSolid-State Electronics, 1999
- SiC Merged p-n/Schottky Rectifiers for High Voltage ApplicationsMaterials Science Forum, 1998
- Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge terminationIEEE Electron Device Letters, 1996
- The pinch rectifier: A low-forward-drop high-speed power diodeIEEE Electron Device Letters, 1984