Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol–Gel Method
Authors:
- Shiun-Sheng JanSJShiun-Sheng Jan
- Ying-Chung ChenYCYing-Chung Chen
- Jung-Chuan ChouJCJung-Chuan Chou
- Chien-Chuan ChengCCChien-Chuan Cheng
- Chun-Te LuCLChun-Te Lu
- 15 February 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 1, No) , 942-948