The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes
Authors:
- 1 December 2018
- journal article
- research article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 436, 244-248
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61704116)
- National Key R&D Plan (2017YFN0405702)
- Heavy Ion Research Facility in Lanzhou
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