Comparison of single-event upset generated by heavy ion and pulsed laser
Authors:
- 13 June 2017
- journal article
- research article
- Published by Springer Nature in Science China Information Sciences
- Vol. 60 (7) , 072401
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- PABAM: A Physics-Based Analytical Model to Estimate Bipolar Amplification Effect Induced Collected Charge at Circuit LevelIEEE Transactions on Device and Materials Reliability, 2015
- Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping TestIEEE Transactions on Nuclear Science, 2015
- Experimental Soft Error Rate of Several Flip-Flop Designs Representative of Production Chip in 32 nm CMOS TechnologyIEEE Transactions on Nuclear Science, 2013
- Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology NodeIEEE Transactions on Nuclear Science, 2011
- Single Event Mechanisms in 90 nm Triple-Well CMOS DevicesIEEE Transactions on Nuclear Science, 2008
- New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse BroadeningIEEE Transactions on Nuclear Science, 2007
- Laser-Induced Latchup Screening and Mitigation in CMOS DevicesIEEE Transactions on Nuclear Science, 2006
- Influence of Laser Pulse Duration in Single Event Upset TestingIEEE Transactions on Nuclear Science, 2006
- Three-dimensional mapping of single-event effects using two photon absorptionIEEE Transactions on Nuclear Science, 2003
- Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depthJournal of Applied Physics, 1998