Calculation of radiation-induced segregation in binary alloy ion-irradiated at low-temperatures
Authors:
- 1 August 1994
- journal article
- research article
- Published by Taylor & Francis in Plasma Devices and Operations
- Vol. 3 (4) , 281-286
Abstract
The theoretical treatment of radiation-induced segregation (RIS) in binary substitutional alloys under ion irradiation at Iow temperatures was realized. The results of numerical calculations and their comparison with experimental measurements of segregation in GaAs alloy demonstrated that the investigation of RIS at low temperature ion irradiation can be used for experimental estimates of the ratio of partial diffusion coefficients for the interstitial migration mechanism.Keywords
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