Experimental Study of the Solid SolutionsTixTa1−xS2

Authors:
  • RKR. F. Koehler
    R. F. Koehler

Abstract
We have found that the substitutional replacement of Ti for Ta in TaS2 stabilizes the octahedral 1T phase for x between 0.1 and 0.9. A comparison of the resistivity, magnetic susceptibility, and thermoelectric power shows that at room temperature the properties vary systematically from diamagnetic, semiconducting behavior for 1T−TaS2 to paramagnetic, metallic behavior for TiS2. This interpretation of the data contradicts all previous models which treat TiS2 as a degenerate semiconductor.

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