GaN/AlGaN intersubband optoelectronic devices
Authors:
- H MachhadaniHMH Machhadani
- P KandaswamyPKP Kandaswamy
- S SakrSSS Sakr
- A VardiAVA Vardi
- A WirtmüllerAWA Wirtmüller
- L NevouLNL Nevou
- F GuillotFGF Guillot
- G PozzovivoGPG Pozzovivo
- M TchernychevaMTM Tchernycheva
- A LupuALA Lupu
- L VivienLVL Vivien
- P CrozatPCP Crozat
Open Access
- 1 December 2009
- journal article
- research article
- Published by IOP Publishing in New Journal of Physics
- Vol. 11 (12)
Abstract
No abstract availableThis publication has 57 references indexed in Scilit:
- Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wellsApplied Physics Letters, 2009
- High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μmApplied Physics Letters, 2008
- Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structuresApplied Physics Letters, 2008
- Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperatureApplied Physics Letters, 2007
- Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3 µmElectronics Letters, 2006
- Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wellsApplied Physics Letters, 2006
- Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structureApplied Physics Letters, 2006
- GaN-based quantum dot infrared photodetector operating at 1.38 µmElectronics Letters, 2005
- Erratum: “Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 82, 4465 (2003)]Applied Physics Letters, 2004
- Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wellsApplied Physics Letters, 2001