Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Authors:
- 6 November 2019
- journal article
- research article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 53 (11) , 1545-1549
Abstract
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost...Keywords
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