Far-infrared laser oscillation from a very small p-Ge crystal under uniaxial stress
Authors:
- 7 June 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (23) , 3432-3434
Abstract
We report on pulse laser oscillation from a p-Ge intervalence band (IVB) laser composed of a Ga-doped Ge crystal measuring about 1×1×5 mm3 which is a very small volume compared with those reported so far for shallow-acceptor-doped Ge. Laser oscillation is only achieved under uniaxial stresses greater than 1300 kg/cm2. We find that the optimum stress for lasing is around 3500–4100 kg/cm2 when the p-Ge IVB lasers are operated at liquid helium temperature. The minimum electric power needed for lasing is only 280 W at a peak period of pulse emission.Keywords
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