Negative bias illumination stress stability of dual‐active layer amorphous indium‐gallium‐zinc‐oxide thin‐film transistor
Authors:
- 19 May 2016
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 213 (7) , 1873-1877
Abstract
In the current study, dual‐active layer amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFT has been fabricated by sequential deposition of oxygen‐rich layer on a top of oxygen‐poor layer in the active layer through oxygen partial pressure control in order to improve reliability under negative bias illumination stress (NBIS) condition. The method is very simple as it is performed in situ without any post treatment. Reliability of a TFT that had a thickness of oxygen‐poor layer and oxygen‐rich active layer in the ratio of 6:4, quite improved with the threshold voltage shift Δ of a‐IGZO TFT at around 3.2 V under NBIS condition of 1000 s in comparison with a TFT (8.5 V) that comprised only oxygen‐poor active layer. The increased reliability is attributed to decrease interaction with ambient and the reduction in the total neutral oxygen vacancy concentration due to the oxygen rich layer at the back‐channel region, which was confirmed by X‐ray photoelectron spectroscopy (XPS) analysis.Keywords
Funding Information
- National Research Foundation of Korea (NRF)
- Ministry of Science, ICT & Future Planning (2013R1A1A2064715)
This publication has 20 references indexed in Scilit:
- Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTsIEEE Transactions on Electron Devices, 2013
- Photo-bias instability of metal oxide thin film transistors for advanced active matrix displaysJournal of Materials Research, 2013
- Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate DielectricsIEEE Electron Device Letters, 2010
- Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stressApplied Physics Letters, 2010
- Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistorsApplied Physics Letters, 2010
- Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulatorApplied Physics Letters, 2009
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and DopingJournal of Display Technology, 2009
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistorsApplied Physics Letters, 2008
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistorsApplied Physics Letters, 2008
- Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4Thin Solid Films, 2005