A simple theory for threshold voltage modulation in IGFETs

Authors:
  • RKR.A. Kotch
    R.A. Kotch
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Abstract
The threshold voltage of an insulated gate field-effect transistor is a function of source-to-substrate reverse bias. In this letter, the previously presented theory is first reviewed. It is then extended to apply to large source-to-substrate reverse bias where the source and drain depletion regions meet under the channel. The result is a pair of theoretical expressions which agree well with experimental measurements.