Low temperature metallic state induced by electrostatic carrier doping of SrTiO3
- 25 September 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (13)
Abstract
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R◻∼10kΩ at low temperatures, with carrier mobility exceeding 1000cm2∕Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR∕dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control.Keywords
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