Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
Authors:
- 8 December 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (23) , 4713-4715
Abstract
We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor–acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This may be associated with the variation of the residual strain in the GaN layer of the heterostructure. Using this heterostructure, near-ultraviolet light-emitting diodes were fabricated and their electroluminescence properties were characterized.Keywords
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