Light Yield and Timing Characteristics of Lu₀.₈Gd₂.₂(Al5–x Gax)O₁₂:Ce,Mg Single Crystals

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Abstract
The scintillation characteristcs of Lu0.8Gd2.2(Al5- xGax)O12:Ce,Mg (x = 2.6 and 3) single crystals grown by the micro-pulling down method are investigated. The light yield of 27,600 photons/MeV obtained for Lu0.8Gd2.2Al2Ga3O12:Ce,Mg is higher than that of 25,400 photons/MeV obtained for Lu0.8Gd2.2Al2.4Ga2.6O12:Ce,Mg. The photoluminescence and scintillation decays measured at room temperayture (RT) for Lu0.8Gd2.2Al2Ga3O12:Ce,Mg are faster than those for Lu0.8Gd2.2Al2.4Ga2.6O12:Ce,Mg. Temperature dependence of radioluminescence (RL) intensity indicates a lower quenching temperature for the Lu0.8Gd2.2Al2Ga3O12:Ce,Mg. Coincidence time resolution of Lu0.8Gd2.2Al2Ga3O12:Ce,Mg detector in coincidence experiment with a BaF2 detector was measured to be 410 ps. The Afterglow and thermally stimulated luminescence (TSL) characteristics below RT are also measured.
Funding Information
  • National Research Council of Thailand (256108A3060035)
  • GIMRT Program of the Institute for Materials Research, Tohoku University (19K0521)
  • Operational Program Research, Development and Education financed by the European Structural and Investment Funds and the Czech Ministry of Education, Youth and Sports (SOLID21 CZ.02.1.01/0.0/0.0/16_019/0000760)

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