The Effect of Oxygen on the Semiconductivity of Quaterrylene

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Abstract
The electrical conductivity of an evaporated film of quaterrylene varied with the pressure of the ambient oxygen. The resistivity was 1.1×1012 Ωcm. in a vacuum of 4×10−8 mmHg; this was very large compared with the previously-reported value, ∼106Ωcm., which was obtained after exposing the film to the air of an atmospheric pressure. The temperature dependence of the resistance of the film was also affected by the ambient oxygen. The intrinsic semiconductor model could be applied only in the case of a high vacuum (∼10−8 mmHg); the band gap, Δε, was 1.7 eV. in this case. From the resistance-temperature relations at the various oxygen pressures, it seems that two acceptor levels, 0.03 eV. and 0.6 eV. above the valence band respectively, exist.

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