Alternating current electroluminescence from GaN-based nanorod light-emitting diodes
Authors:
- Kun WangKun Wang
- Peiqi ChenPCPeiqi Chen
- Jingjing ChenJCJingjing Chen
- Ye LiuYLYe Liu
- Chaoxing WuCWChaoxing Wu
- Jie SunJSJie Sun
- Xiongtu ZhouXZXiongtu Zhou
- Yongai ZhangYZYongai Zhang
- Tailiang GuoTGTailiang Guo
- 1 August 2021
- journal article
- research article
- Published by Elsevier in Optics & Laser Technology
- Vol. 140
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China
This publication has 25 references indexed in Scilit:
- Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting DiodeIEEE Photonics Technology Letters, 2015
- Electroluminescent Devices: Highly Stretchable and Self‐Deformable Alternating Current Electroluminescent Devices (Adv. Mater. 18/2015)Advanced Materials, 2015
- Nano-LED array fabrication suitable for future single photon lithographyNanotechnology, 2015
- High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)Nano Letters, 2015
- Get it white: color-tunable AC/DC OLEDsLight: Science & Applications, 2015
- Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substratesJournal of Applied Physics, 2014
- Is it viable to improve light output efficiency by nano-light-emitting diodes?Applied Physics Letters, 2013
- III-Nitride full-scale high-resolution microdisplaysApplied Physics Letters, 2011
- Efficient and Directed Nano-LED Emission by a Complete Elimination of Transverse-Electric Guided ModesNano Letters, 2011
- High-power InGaN single-quantum-well-structure blue and violet light-emitting diodesApplied Physics Letters, 1995