Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS
Authors:
- 26 May 2016
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 49 (25) , 255308
Abstract
The interface of Al 2 O 3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al 2 O 3 /4H-SiC up to 1100 °C forms a thin interfacial layer of SiO 2 between Al 2 O 3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO 2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al 2 O 3 ) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.Keywords
Funding Information
- Vetenskapsrådet (D0674701)
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