A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy
- 18 May 2018
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 10 (25) , 12187-12195
Abstract
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented.Keywords
All Related Versions
Funding Information
- H2020 European Research Council (669204)
This publication has 30 references indexed in Scilit:
- Perpendicular all the wayNature Materials, 2010
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctionNature Materials, 2010
- Stability of $2\pi$ Domain Walls in Ferromagnetic NanoringsIEEE Transactions on Magnetics, 2010
- Micromagnetic study of magnetization reversal in ferromagnetic nanoringsPhysical Review B, 2009
- Spin pumping in Co56Fe24B20multilayer systemsJournal of Physics D: Applied Physics, 2008
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctionsNature Materials, 2004
- Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriersNature Materials, 2004
- Sweep-rate-dependent coercivity simulation of FePt particle arraysJournal of Applied Physics, 2004
- Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junctionPhysical Review B, 2001
- Spin-dependent tunneling conductance ofsandwichesPhysical Review B, 2001