Electronic effects in the specific heat of silicon
Author:
- 15 September 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 12 (6) , 2539-2540
Abstract
Recent interest in the low-temperature specific heat of heavily doped silicon may help to resolve questions posed by measurements of the dependence of the Debye temperature of germanium on doping.Keywords
This publication has 7 references indexed in Scilit:
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- The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectraPhilosophical Magazine, 1959