Study of photoluminescence kinetics in bulk GaPN and GaPNAs layers on silicon substrates grown by molecular beam epitaxy

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Abstract
Objective: The aim of this work is to study bulk GaPN and GaPNAs layers grown by molecular beam epitaxy on silicon substrates. The optical properties of the heterostructures were investigated using photoluminescence. The technique of time-resolved photoluminescence (or photoluminescence kinetics) was employed to evaluate the carrier lifetime in bulk GaPN and GaPNAs layers.Experimental: An investigation of the influence of the buffer layer on the heterostructure characteristics was conducted. The photoluminescence intensity in the bulk GaPN layer was found to be virtually identical for heterostructures employing either a buffer layer grown by Migration-Enhanced Epitaxy (MEE-GaP buffer) or a GaP buffer layer grown with a gradual temperature ramp from 450 to 600 °C.Conclusion: It was shown that the lifetime of minority carriers in the bulk GaPN layer grown on a silicon substrate is determined to a greater extent by defects introduced during the nitrogen incorporation into the GaP lattice, rather than by defects caused by growth on silicon substrate