Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

Authors:
Publisher website
Google Scholar
Abstract
The interplay between magnetic order and electronic band structure in antiferromagnets has garnered increasing interest due to its potential for spintronic applications. While magnetic transitions have been shown to induce substantial band structure modifications in optical measurements, their influence on electronic transport remains poorly understood. In this work, we investigate the transport properties of CrSBr, a van der Waals antiferromagnetic semiconductor, over a wide range of carrier densities modulated by gate voltage. We observe a drastic contrast in magnetoresistance behavior between the low- and high-carrier density regimes. Through a combination of experiment and modeling, we identify magnetically driven carrier concentration modulation and mobility modulation as the dominant mechanisms governing magnetoresistance in the respective regimes. These findings advance the understanding of magnetoelectric transport in antiferromagnets and suggest promising routes for energy-efficient spintronic technologies in memory, logic, and sensing applications.
Funding Information
  • Semiconductor Research Corporation
  • Defense Advanced Research Projects Agency
  • National Science Foundation (DMREF-2522384, 2421694, NSF-DMR 2218550)
  • U.S. Department of Energy (DE-SC0025387)
  • Basic Energy Sciences
  • Army Research Office (W911NF-20-2-0061, DURIP W911NF-20-1-0074)
  • European Regional Development Fund
  • Ministry of Education, Youth and Science (LUAUS25268)

This publication has 46 references indexed in Scilit: