The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures
Authors:
- B.A. VojakBVB.A. Vojak
- N. HolonyakNHN. Holonyak
- W.D. LaidigWLW.D. Laidig
- K. HessKHK. Hess
- J.J. ColemanJCJ.J. Coleman
- P.D. DapkusPDP.D. Dapkus
- 1 August 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 35 (6) , 477-481
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1−xAs-GaAs heterostructuresJournal of Applied Physics, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Tunnel injection and phonon-assisted recombination in multiple quantum-well AlxGa1−xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1979
- Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laserApplied Physics Letters, 1979
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Cyclotron resonance and Hall measurements on the hole carriers in GaAsJournal of Physics C: Solid State Physics, 1971
- Magnetospectroscopy of shallow donors in GaAsSolid State Communications, 1969
- Interband magneto-optical absorption in gallium arsenideJournal of Physics and Chemistry of Solids, 1968
- Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton AbsorptionJournal of the Physical Society of Japan, 1966