Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
Authors:
- 26 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1058-1060
Abstract
GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.Keywords
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