Disorder dechanneling of low-energy protons and alpha particles in silicon

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Abstract
Dechanneling of low-energy protons (< 160 keV) and α-particles (+ was calculated from the backscattered yields on the basis of the single-scattering theory of dechanneling and agreed within experimental error with that determined by the channeling technique. Single scattering also correctly predicted the energy dependence of dechanneling after implantation of Si with 80-keV Cl+ and accounted for most of the dechanneling correction necessary for the calculation of the disorder profile, which was produced by 40-keV B+ in Si at -120°C. Thus, the present results suggest that single scattering gives a good description of the dechanneling of low-energy H1 + and He++ from the (111) si channel.