Blind Pixel Analysis of InGaAs Detector and Optimization of P Electrode

Authors:
  • 邓洪邓洪海DENGHong-hai
    邓洪海DENGHong-hai
  • 杨波杨波YANGBo
    杨波YANGBo
  • 夏辉夏辉XIAHui
    夏辉XIAHui
  • 邵海邵海宝SHAOHai-bao
    邵海宝SHAOHai-bao
  • 王强王强WANGQiang
    王强WANGQiang
  • 王志王志亮WANGZhi-liang
    王志亮WANGZhi-liang
  • 朱友朱友华ZHUYou-hua
    朱友华ZHUYou-hua
  • 黄静黄静HUANGJing
    黄静HUANGJing
  • 李雪李雪LIXue
    李雪LIXue
  • 邵秀邵秀梅SHAOXiu-mei
    邵秀梅SHAOXiu-mei
  • 龚海龚海梅GONGHai-mei
    龚海梅GONGHai-mei
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Abstract
The blind pixels existing in planner PIN type In-0.52 Al-0.48 As/In-0.53 Ga-0.47 As/ In-0.52 Al-0.48 As short wavelength infrared detector were analyzed with the aid of scanning capacitance microscopy technique. And the simulation of blind pixels by Sentaurus TCAD was also presented. In order to eliminate the blind pixels, the transfer line model chip was fabricated to optimize the ohmic contact of Au electrode on P-In-0.52 Al-0.48 As. The result shows that a conductive chanel formed between the P electrode and the N -In-0.52 Al-0.48 As cap layer outside the diffusion region resultes in blind pixel generation. Fourthermore, the special contact resistivity which is 3.52 X 10(-4) Omega.cm(-2) of Au on P-In-0.52 Al-0.48 As was obatined and the problem of Au flowing occurred in rapid thermal processing was suppressed after optimization, so that the probability of blind pixels generation was reduced.