Weak localization and electron–electron interactions in few layer black phosphorus devices
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Open Access
- 3 August 2016
- journal article
- research article
- Published by IOP Publishing in 2D Materials
- Vol. 3 (3) , 034003
Abstract
Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼ T − 0.4 ). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.Keywords
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Funding Information
- Japan Society for the Promotion of Science (MEXT)
- MARCO and DARPA (FAME Center)
- Division of Electrical, Communications and Cyber Systems (1509958)
- Office of Naval Research
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