Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
Authors:
- Cheng ChenCCCheng Chen
- Denis LabrousseDLDenis Labrousse
- Stéphane LefebvreSLStéphane Lefebvre
- Mickael PetitMPMickael Petit
- Cyril ButtayCBCyril Buttay
- Hervé MorelHMHervé Morel
- 1 August 2015
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 55 (9-10) , 1708-1713
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Robustness of 1.2kV SiC MOSFET devicesMicroelectronics Reliability, 2013
- Experimental analysis of electro-thermal instability in SiC Power MOSFETsMicroelectronics Reliability, 2013
- Operation of SiC normally-off JFET at the edges of its safe operating areaMicroelectronics Reliability, 2011