Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
Authors:
- J.H. ComfortJCJ.H. Comfort
- J.D. CresslerJCJ.D. Cressler
- E.F. CrabbeECE.F. Crabbe
- J.Y.-C. SunJSJ.Y.-C. Sun
- B.S. MeyersonBMB.S. Meyerson
- T. TiceTTT. Tice
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (3) , 469-482
Abstract
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology.Keywords
This publication has 33 references indexed in Scilit:
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- High-low polysilicon-emitter SiGe-base bipolar transistorsIEEE Electron Device Letters, 1993
- High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactorIEEE Electron Device Letters, 1993
- Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layersApplied Physics Letters, 1993
- Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors1990
- Graded-SiGe-base, poly-emitter heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Bipolar transistor with self-aligned lateral profileIEEE Electron Device Letters, 1987
- Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial siliconIEEE Electron Device Letters, 1987
- The Mechanism of Oxidation of SiGe.MRS Proceedings, 1987
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy1987