A mode-engineered hybrid III-V-on-silicon photodetector
Authors:
- 1 September 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-3
Abstract
We report on a novel III-V-on-silicon-photonics device architecture with an excellent modal overlap with the III-V material. Using this concept, we demonstrate hybrid photo-detectors with very low dark currents, a responsivity of up to 0.8 A/W and a low capacitance of 0.2 pF.Keywords
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