Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp
Authors:
- 7 February 2013
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Chemical Communications
- Vol. 49 (27) , 2783-2785
Abstract
Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm2 V−1 s−1 after sintering at 300 °C.Keywords
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