Ge quantum dots light-emitting devices

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Abstract
Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 μm, for which Si is transparent. Ge self-assembled quantum dots were grown on silicon-oninsulator (SOI) by molecular beam epitaxy (MBE) in Stranski-Krastanov (S-K) mode. Then, electron beam lithography (EBL) was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma (ICP) dry etching. Room-temperature photoluminescence (PL) was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current-injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.

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