Electrical spin injection in forward biased Schottky diodes based on InGaAs–GaAs quantum well heterostructures
- 30 October 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (18) , 181118
Abstract
The authors demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of the injected holes was detected by measuring the circular polarization of the electroluminescence (EL) from the near surface InGaAs∕GaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T=2K for the LESD structure with Au–Ni–Au Schottky contact.Keywords
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