p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressure
Authors:
- 15 March 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 2256-2258
Abstract
Electrical properties of a low‐resistive and stable p‐type ZnSe crystal grown by the temperature difference method under controlled vapor pressure are reported. The temperature dependence of Hall mobility, carrier (hole) concentration, and conductivity are measured by the van der Pauw method. Hole mobility appears to be about 200 cm2/V s at 100 K and about 50 cm2/V s at 300 K. The activation energy of a shallow acceptor impurity is also determined to be 70–85 meV.Keywords
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