Phase Separation in wurtzite In1−x−yGaxAlyN
Author:
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 3
Abstract
The wurtzite structure In1−x−yGaxAlyN quaternary system is studied with respect to the unstable region in mixing. The composition in the unstable region is calculated from the free energy of mixing by using the strictly regular solution model. The interaction parameter used in this calculation is obtained by using the delta-lattice-parameter method. Here, the proportionality constant connecting the lattice constants and the band-gap energy is determined by fitting the calculation to the composition data obtained experimentally from InGaN grown by metallorganic vapor phase epitaxy. From this calculation, the ternary alloys of InAlN, InGaN and GaAlN are predicted to always, sometimes, and hardly ever, respectively, have an unstable mixing region. The essential mismatch in thermal equilibrium between the strictly regular solution approximation and the growth conditions in MOVPE is removed by using a fitting calculation and experimental data. Also, the mismatch between the zinc-blende structure and the wurtzite structure is corrected. As a result, this prediction of the phase separation in In1−x−yGaxAlyN becomes more reliable.Keywords
This publication has 8 references indexed in Scilit:
- Unstable mixing region in wurtzite In1−−Ga Al NJournal of Crystal Growth, 1998
- Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyNApplied Physics Letters, 1997
- The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM CharacterizationMRS Internet Journal of Nitride Semiconductor Research, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992
- Unstable Regions in III–V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970