(InAs)1(GaAs)1 Layered Crystal Grown by MOCVD
Authors:
- Takashi FukuiTFTakashi Fukui
- Hisao SaitoHSHisao Saito
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L521
Abstract
(InAs)1(GaAs)1 layered crystals (LC) were successfully grown on (100) InP substrate for the first time. The growth method was metallorganic chemical vapor deposition (MOCVD). Monolayer growth was achieved by low growth rate and rapid change of gas composition. Layered crystals were confirmed by X-ray diffraction peaks at the (100) and (300) positions. The electrical and optical properties of (InAs)1(GaAs)1 LC were also studied.Keywords
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