ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
Authors:
- Kazunori MendaKMKazunori Menda
- Eizaburo KandaEKEizaburo Kanda
- Takeshi YokoyamaTYTakeshi Yokoyama
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3A) , L391-393
Abstract
Undoped (001)GaAs surfaces have been analyzed with angular-resolve X-ray photoemission spectroscopy (ARXPS). The ARXPS analysis was performed on the GaAs surfaces which had been exposed to air for about 3 weeks after chemical etching or HF dipping. Both Ga2O3 and As2O3 signals were detected on the etched surface, whereas the Ga2O3 signal was not detected on the HF-dipped surface. This implies that the HF-dipped surface can be cleaned in vacuum by a thermal treatment at ∼500°C.Keywords
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