Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD
- 19 July 2019
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 1 (8) , 1387-1399
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation (1810419)
- U.S. Department of War (W911NF-15-1-0424)
This publication has 67 references indexed in Scilit:
- Universal phonon mean free path spectra in crystalline semiconductors at high temperatureScientific Reports, 2013
- Two-color time-domain thermoreflectance of various metal transducers with an optical parametric oscillatorMeasurement Science and Technology, 2012
- In‐situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)physica status solidi (c), 2008
- 12 W/mm AlGaN–GaN HFETs on Silicon SubstratesIEEE Electron Device Letters, 2004
- AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substratesSolid-State Electronics, 2002
- High Thermal Conductivity MaterialsMRS Bulletin, 2001
- High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructuresJournal of Physics D: Applied Physics, 2001
- Vibrational properties of AlN grown on (111)-oriented siliconPhysical Review B, 2001
- LPCVD against PECVD for micromechanical applicationsJournal of Micromechanics and Microengineering, 1996
- Comparison of detection limits for EELS and EDXSMicroscopy Microanalysis Microstructures, 1991