Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz
Author:
- R. JudaschkeRJR. Judaschke
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 48 (4) , 719-724
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- 140 GHz indium phosphide Gunn diodeElectronics Letters, 1994
- Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency contentMicrowave and Optical Technology Letters, 1992
- High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHzIEEE Electron Device Letters, 1990
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970