Blue-green laser diodes
Authors:
- 9 September 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1272-1274
Abstract
The first laser diodes fabricated from wide-band-gap II-VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.Keywords
This publication has 21 references indexed in Scilit:
- Laser action in the blue-green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structuresApplied Physics Letters, 1990
- Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer StructuresJapanese Journal of Applied Physics, 1990
- Room temperature photopumped ZnSe lasersIEEE Photonics Technology Letters, 1990
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratioJournal of Applied Physics, 1987
- Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Cathodoluminescence, gain, and stimulated emission in electron-beam-pumped ZnCdSeJournal of Applied Physics, 1987
- Electron beam pumped lasing in ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1987
- Electron beam pumped II–VI lasersJournal of Crystal Growth, 1985