The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature
- 6 June 2017
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 28 (18) , 14040-14048
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodesMaterials Science and Engineering: B, 2012
- Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayerThin Solid Films, 2012
- Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layerMaterials Science in Semiconductor Processing, 2011
- Electrical and optical properties of p-type silicon based on polypyrrole-derivative polymerSynthetic Metals, 2011
- The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodesJournal of Applied Polymer Science, 2010
- Dielectric spectroscopy studies on (PVP+PVA) polyblend filmMicroelectronic Engineering, 2006
- The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes fromI–V–TcharacteristicsSemiconductor Science and Technology, 2006
- The effects of the temperature on the some parameters obtained from current–voltage and capacitance–voltage characteristics of polypyrrole/n-Si structurePolymer, 2005
- Recent advances in Schottky barrier conceptsMaterials Science and Engineering: R: Reports, 2001
- On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriersSolid-State Electronics, 1986