Edge isolation of solar cells using laser doping
Authors:
- Catherine ChanCCCatherine Chan
- Malcolm AbbottMAMalcolm Abbott
- Brett HallamBHBrett Hallam
- Mattias JuhlMJMattias Juhl
- Dong LinDLDong Lin
- Zhongtian LiZLZhongtian Li
- Yang LiYLYang Li
- John RodriguezJRJohn Rodriguez
- Stuart WenhamSWStuart Wenham
- 1 January 2015
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 132, 535-543
Abstract
No abstract availableFunding Information
- Australian Renewable Energy Agency
This publication has 18 references indexed in Scilit:
- Photoluminescence imaging for determining the spatially resolved implied open circuit voltage of silicon solar cellsJournal of Applied Physics, 2014
- XIS: A low-current, high-voltage back-junction back-contact photovoltaic device2013
- Deep junction laser doping for contacting buried layers in silicon solar cellsSolar Energy Materials and Solar Cells, 2013
- The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in siliconJournal of Applied Physics, 2012
- Laser induced defects in laser doped solar cellsProgress in Photovoltaics: Research and Applications, 2010
- Modeling, geometric optimization and isolation of the edge region in silicon solar cellsSolar Energy Materials and Solar Cells, 2010
- Study on the edge isolation of industrial silicon solar cells with waterjet-guided laserSolar Energy Materials and Solar Cells, 2007
- Photoluminescence imaging of silicon wafersApplied Physics Letters, 2006
- Investigation of edge recombination effects in silicon solar cell structures using photoluminescenceApplied Physics Letters, 2006
- New contact frame design for minimizing losses due to edge recombination and grid-induced shadingSolar Energy Materials and Solar Cells, 2003