ECR plasma etching of chemically vapour deposited diamond thin films

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Abstract
Arc jet deposited films of diamond have been patterned using Au or photoresist masks and electron cyclotron resonance (ECR) O2 discharges. To achieve anisotropic features, additional RF-induced DC biasing of the sample is necessary. Diamond etch rates of 2000 Å/min were obtained for 1 mtorr, 400 W O2 discharges with −80 V DC bias. The etch rates increase with either pressure or microwave power as a result of a greater density of atomic oxygen in the plasma. Chlorine (BCl3)-based discharges did not product significant etching of the diamond, but SF6/O2 mixtures had slightly faster rates than O2 alone.

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