On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs
Authors:
Open Access
- 30 September 2018
- journal article
- conference paper
- Published by Elsevier in Microelectronics Reliability
- Vol. 88-90, 610-614
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si BuffersIEEE Transactions on Electron Devices, 2017
- Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer LayersIEEE Transactions on Electron Devices, 2016
- GaN on Si Technologies for Power Switching DevicesIEEE Transactions on Electron Devices, 2013
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETsIEEE Transactions on Electron Devices, 2012