Fully-integrated 5/2 GHz GaAs MESFET transmitter MMIC for high-capacity wireless local area network applications

Authors:

HTHuan-Shang Tsai
Huan-Shang Tsai
YCYoun-Kai Chen
Youn-Kai Chen
EBE. Busking
E. Busking
TTT. Tieman
T. Tieman
JKJ. Kruys
J. Kruys

20 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 203-205
DOI:10.1109/gaas.1999.803758

Abstract

A 5.2 GHz gallium arsenide MESFET transmitter monolithic microwave integrated circuit is demonstrated. Gain and 1 dB compression point are as high as 14 dB and +11 dBm respectively.

Keywords

GALLIUM ARSENIDE
MESFETS
TRANSMITTERS
MMICS
WIRELESS LAN
POWER AMPLIFIERS
POWER GENERATION
CIRCUITS
COSTS
QUADRATURE AMPLITUDE MODULATION

This publication has 2 references indexed in Scilit:

5 GHz SiGe HBT monolithic radio transceiver with tunable filtering
2003
A 5.8 GHz, 3.0 V single-supply power MMIC for electronic toll collection system
2002