Potential profile between boron-doped diamond electron emitter and anode electrode
- 6 March 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (10) , 1297-1299
Abstract
The voltage drop of vacuum and boron (B)-doped diamond electron emitter bulk has been discussed in order to understand the electron emission mechanism of B-doped diamond. It is confirmed that the electron emission from B-doped diamond depends on its film thickness and the localized electron pass/channel is formed in the film. From the results of the threshold voltage versus anode-diamond spacing characteristics, it is found that most of the anode voltage is applied in vacuum, and the high electric field near the B-doped diamond surface is required for the electron emission from B-doped diamond regardless of the film thickness.Keywords
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