Electrochemical Growth and Structural Study of the AlxGa1−xAs Nanowhisker Layer on the GaAs Surface

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Abstract
This work presents a novel, cost-effective method for synthesizing AlxGa1−xAs nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with structuring the GaAs surface by electrochemical etching, forming a branched nanowhisker system. Despite the close resemblance of the crystal lattices of AlAs, GaAs, and AlxGa1−xAs, our study highlights the formation of nanowhiskers instead of layer-by-layer film growth. X-ray diffraction analysis and photoluminescence spectrum evaluations confirm the synthesized structure’s crystallinity, uniformity, and bandgap characteristics. The unique morphology of the nanowhiskers offers promising implications for solar cell applications because of the increased light absorption potential and reduced surface recombination energy losses. We conclude by emphasizing the need for further studies on the growth mechanisms of AlxGa1−xAs nanowhiskers, adjustments of the “x” parameter during electrochemical deposition, and detailed light absorption properties of the formed compounds. This research contributes to the field of wideband materials, particularly for solar energy applications, highlighting the potential of electrochemical deposition as a flexible and economical fabrication method.
Funding Information
  • Ministry of Education and Science of Ukraine (0122U000129, 0121U10942, 0123U100110, CA20129, CA20126, 739508)
  • COST action (0122U000129, 0121U10942, 0123U100110, CA20129, CA20126, 739508)
  • Horizon 2020 (0122U000129, 0121U10942, 0123U100110, CA20129, CA20126, 739508)

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