Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Authors:
- Feng PanFeng Pan
- Chao ChenCCChao Chen
- Zhi-Shun WangZWZhi-Shun Wang
- Yu-Chao YangYYYu-Chao Yang
- Jing YangJYJing Yang
- Fei ZengFZFei Zeng
Open Access
- 1 November 2010
- journal article
- Published by Elsevier in Progress in Natural Science: Materials International
- Vol. 20, 1-15
Abstract
No abstract availableKeywords
Funding Information
- National Hi-tech (R&D) Program of China ((Grant No. 2009AA034001))
- National Natural Science Foundation of China ((Grant Nos. 50772055 and 50871060))
- National Basic Research Program of China ((Grant No. 2010CB832905))
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