6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
- 11 October 2017
- journal article
- research article
- Published by Wiley in ETRI Journal
- Vol. 39 (5) , 737-745
Abstract
No abstract availableKeywords
Funding Information
- National Research Foundation of Korea (NRF-2015M1A3A3A03027135)
- Korean Government (MSIP)
This publication has 10 references indexed in Scilit:
- AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return LossETRI Journal, 2016
- 6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMICElectronics Letters, 2016
- An Output Matching Technique for a GaN Distributed Power Amplifier MMIC Using Tapered Drain Shunt CapacitorsIEEE Microwave and Wireless Components Letters, 2015
- Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2013
- History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and BeyondIEEE Microwave Magazine, 2013
- A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICsIEEE Transactions on Microwave Theory and Techniques, 2012
- A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT TechnologyIEEE Journal of Solid-State Circuits, 2009
- Microwave Circuit Design Using Linear and Nonlinear Techniques2005
- New design method of uniform and nonuniform distributed power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2001
- MESFET Distributed Amplifier Design GuidelinesIEEE Transactions on Microwave Theory and Techniques, 1984